SI5499DC-T1-E3

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, converters, and motor control
• Characteristics: Low on-resistance, high current capability, low gate charge
• Package: D-PAK (TO-252)
• Essence: Efficient power switching
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 33A
• RDS(ON): 4.5mΩ
• Gate Charge: 14nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• Fast switching speed
• Low gate drive power loss
• Enhanced thermal performance

Advantages

• High efficiency
• Reduced power dissipation
• Improved system reliability

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The SI5499DC-T1-E3 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

1. Power Supplies: Used for efficient power conversion in AC/DC and DC/DC power supplies.
2. Motor Control: Enables precise control of motor speed and direction in various industrial and automotive applications.
3. Converters: Facilitates the conversion of electrical energy from one form to another with minimal losses.

Detailed and Complete Alternative Models

1. Infineon IPP60R190E6
2. Vishay Si7157DP

This content provides a comprehensive overview of the SI5499DC-T1-E3 Power MOSFET, covering its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.