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MBRM110LT3G 10V 1A 415mV@2A Schottky diodePower rectifier, 1.0 A, 10 V

MBRM110LT3G

10V 1A 415mV@2A Schottky diodePower rectifier, 1.0 A, 10 V
Número de pieza
MBRM110LT3G
Categoría
diode > Schottky diode
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
POWERMITE
Embalaje
taping
Número de paquetes
12000
Descripción
POWERMITEPower encapsulation This Schottky diode Powermite uses the Schottky diode barrier principle, using barrier metal and epitaxial structure, which can produce optimized forward voltage drop-reverse current trade-off. This advanced encapsulation technology can be used to achieve energy-efficient miniature, space-saving devices. Due to its unique thermal design, Powermite has the same thermal performance as SMA, but with a 50% smaller footprint and a height profile of < 1.1 mm, one of the smallest in the industry. Due to its small size, it is suitable for portable and battery-operated products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size performance are critical.
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En stock 56230 PCS
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