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NSV40302PDR2G 1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A

NSV40302PDR2G

1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A
Número de pieza
NSV40302PDR2G
Categoría
Triode/MOS Tube/Transistor > Triode(BJT)
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SOIC-8
Embalaje
taping
Número de paquetes
2500
Descripción
ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors are surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control. Typical applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
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En stock 53088 PCS
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Palabras clave deNSV40302PDR2G
NSV40302PDR2G Componentes electrónicos
NSV40302PDR2G Ventas
NSV40302PDR2G Proveedor
NSV40302PDR2G Distribuidor
NSV40302PDR2G Tabla de datos
NSV40302PDR2G Fotos
NSV40302PDR2G Precio
NSV40302PDR2G Oferta
NSV40302PDR2G El precio más bajo
NSV40302PDR2G Buscar
NSV40302PDR2G Adquisitivo
NSV40302PDR2G Chip