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SBRS8130LT3G 30V 2A 445mV@2A Schottky diodePower rectifier, 1.0 A, 30 V

SBRS8130LT3G

30V 2A 445mV@2A Schottky diodePower rectifier, 1.0 A, 30 V
Número de pieza
SBRS8130LT3G
Categoría
diode > Schottky diode
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SMB (DO-214AA)
Embalaje
taping
Número de paquetes
2500
Descripción
The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.
Solicitud de cotización
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En stock 91267 PCS
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