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NGTD17T65F2SWK IGBT 600V 40A FS2 Bare Die

NGTD17T65F2SWK

IGBT 600V 40A FS2 Bare Die
Número de pieza
NGTD17T65F2SWK
Categoría
Transistor/MOS tube/transistor > IGBT tube/module
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SMD
Embalaje
bagged
Número de paquetes
1
Descripción
This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses.
Solicitud de cotización
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En stock 89412 PCS
Información del contacto
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Palabras clave deNGTD17T65F2SWK
NGTD17T65F2SWK Componentes electrónicos
NGTD17T65F2SWK Ventas
NGTD17T65F2SWK Proveedor
NGTD17T65F2SWK Distribuidor
NGTD17T65F2SWK Tabla de datos
NGTD17T65F2SWK Fotos
NGTD17T65F2SWK Precio
NGTD17T65F2SWK Oferta
NGTD17T65F2SWK El precio más bajo
NGTD17T65F2SWK Buscar
NGTD17T65F2SWK Adquisitivo
NGTD17T65F2SWK Chip