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NGTD23T120F2SWK IGBT 1200V 25A FS2 Bare Die

NGTD23T120F2SWK

IGBT 1200V 25A FS2 Bare Die
Número de pieza
NGTD23T120F2SWK
Categoría
Transistor/MOS tube/transistor > IGBT tube/module
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SMD
Embalaje
bagged
Número de paquetes
1
Descripción
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Solicitud de cotización
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En stock 98917 PCS
Información del contacto
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Palabras clave deNGTD23T120F2SWK
NGTD23T120F2SWK Componentes electrónicos
NGTD23T120F2SWK Ventas
NGTD23T120F2SWK Proveedor
NGTD23T120F2SWK Distribuidor
NGTD23T120F2SWK Tabla de datos
NGTD23T120F2SWK Fotos
NGTD23T120F2SWK Precio
NGTD23T120F2SWK Oferta
NGTD23T120F2SWK El precio más bajo
NGTD23T120F2SWK Buscar
NGTD23T120F2SWK Adquisitivo
NGTD23T120F2SWK Chip