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NGTD21T65F2WP Trench Field Stop 650V IGBT 650V 45A FS2 Die

NGTD21T65F2WP

Trench Field Stop 650V IGBT 650V 45A FS2 Die
Número de pieza
NGTD21T65F2WP
Categoría
Transistor/MOS tube/transistor > IGBT tube/module
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SMD
Embalaje
bagged
Número de paquetes
1
Descripción
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Solicitud de cotización
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En stock 75699 PCS
Información del contacto
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Palabras clave deNGTD21T65F2WP
NGTD21T65F2WP Componentes electrónicos
NGTD21T65F2WP Ventas
NGTD21T65F2WP Proveedor
NGTD21T65F2WP Distribuidor
NGTD21T65F2WP Tabla de datos
NGTD21T65F2WP Fotos
NGTD21T65F2WP Precio
NGTD21T65F2WP Oferta
NGTD21T65F2WP El precio más bajo
NGTD21T65F2WP Buscar
NGTD21T65F2WP Adquisitivo
NGTD21T65F2WP Chip