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NGTD17T65F2WP Trench Field Stop 650V IGBT 600V 40A FS2 Die

NGTD17T65F2WP

Trench Field Stop 650V IGBT 600V 40A FS2 Die
Número de pieza
NGTD17T65F2WP
Categoría
Transistor/MOS tube/transistor > IGBT tube/module
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SMD
Embalaje
bagged
Número de paquetes
1
Descripción
This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses.
Solicitud de cotización
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En stock 56699 PCS
Información del contacto
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Palabras clave deNGTD17T65F2WP
NGTD17T65F2WP Componentes electrónicos
NGTD17T65F2WP Ventas
NGTD17T65F2WP Proveedor
NGTD17T65F2WP Distribuidor
NGTD17T65F2WP Tabla de datos
NGTD17T65F2WP Fotos
NGTD17T65F2WP Precio
NGTD17T65F2WP Oferta
NGTD17T65F2WP El precio más bajo
NGTD17T65F2WP Buscar
NGTD17T65F2WP Adquisitivo
NGTD17T65F2WP Chip